Semiconductor fuse and method
AssigneesAT&T Global Information Solutions Company, Hyundai Electronics America, Symbios Logic Inc.
InventorsSteven S. Lee, Gayle W. Miller
Life of this patent
Estimating the term…
Abstract
A semiconductor fuse and method for fabricating the same An insulating layer is provided and a trench formed therein. A fusible link is then formed across the insulating layer and trench and conformal therewith. The link has a break region of minimum thickness and width at an intersection of a sidewall and bottom surface of the trench.
Claims8
A method for fabricating a semiconductor fuse, comprising:
- providing an insulating layer;
- forming, in said insulating layer, a trench having a depth that is greater than its length, and having sidewalls and a bottom surface;
- and
- forming a fusible link across said layer and trench and conformal therewith, said link having a break region of minimum thickness and width at an intersection of said sidewall and said bottom surface.
In a semiconductor, a fusible aluminum link having a break region, said break region covering the intersection of two flat surfaces inside a trench, and the thickness of said break region is less than the thickness of the remainder of said link, wherein said link has a necked down region having a width which is less than the width of the rest of the link, said break region is included in said necked down region, and said necked down region extends across said trench so that it covers a sidewall only at a first end of said trench.
In a semiconductor, a fusible metal link, said link having a thickness profile resulting from the deposition of metal onto an insulator and onto sidewalls and bottom of a trench formed therein, the trench having a depth greater than its length.
Dependencies are inferred from the claim text.