Schottky carrier diode with plasma treated layer
AssigneeMurata Manufacturing Co., Ltd.
InventorsTomoyasu Miyata, Koichi Sakamoto
Life of this patent
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Abstract
A Schottky barrier diode having improved breakdown characteristics has an n.sup.+ semiconductor layer and an n.sup.- semiconductor layer provided on the n.sup.+ semiconductor layer. The n.sup.- semiconductor layer is configured to form a mesa. An insulating layer is formed so as to expose the upper surface of the mesa. An anode electrode is provided on the exposed surface and a side surface of the mesa, while a cathode is electrically connected to the n.sup.+ layer. A plasma treated layer is provided in the n.sup.- semiconductor layer so as to extend inwardly from at least a portion of the side surface of the mesa.
Claims9
A Schottky barrier diode comprising:
- an n.sup.+ semiconductor layer;
- an n.sup.- semiconductor layer provided on the n.sup.+ semiconductor layer, the n.sup.- semiconductor layer having a mesa which projects upward from a lower surface of the mesa to an upper surface, and has a side surface between the upper surface and the lower surface;
- an anode electrode provided on a central portion of the upper surface within a periphery thereof, the anode electrode being in Schottky contact with the n.sup.- layer;
- and
- a cathode electrode provided on the n.sup.+ semiconductor layer;
- the n.sup.- semiconductor layer further comprising a plasma treated layer extending inwardly from at least a portion of the side surface of the mesa.
Dependencies are inferred from the claim text.