Power semiconductor switch with an integrated circuit

Abstract

A semiconductor arrangement with a vertical power semiconductor switch and an integrated CMOS or bipolar circuit is provided, whereby the integrated CMOS or bipolar circuit is arranged on a semiconductor islet insulated from a first semiconductor material region by a buried insulating layer. The first semiconductor material region is included as a part of the structure of the power semiconductor switch. The buried insulating layer is surrounded by a second semiconductor material region arranged between it and the first semiconductor material region, the doping of which is the opposite of that of the first semiconductor material region. The second semiconductor region is coupled to the first semiconductor region by a circuit. This circuit does not directly connect the potential of the second semiconductor material region with the potential of the first semiconductor material region. The circuit limits the potential of the second semiconductor material region to values smaller than those capable of influencing the integrated circuit.

Dependencies are inferred from the claim text.