Protective configuration against electrostatic discharges in semiconductor components controllable by field effect

In a circuit including a first semiconductor component being controllable by field effect and having a gate terminal, a source terminal, and a drain terminal, a configuration for protecting the first semiconductor component against electrostatic discharges, comprising:

• a voltage-limiting, protective, second semiconductor component being connected to the gate terminal of the first semiconductor component, said second semiconductor component being an integrated bipolar transistor having a base terminal and a collector-to-emitter path connected between the drain terminal and the gate terminal of the first semiconductor component;
• and
• a resistor connected between said base terminal of said bipolar transistor and the source terminal of the first semiconductor component.