Volcano defect-free tungsten plug

A method of forming tungsten plug metallization without volcano defects in the fabrication of integrated circuits comprising:

• providing semiconductor device structures in and on a semiconductor substrate;
• providing an insulating layer covering said semiconductor device structures wherein a contact opening is made through said insulating layer to said semiconductor substrate;
• depositing a glue layer conformally over the surface of said insulating layer and within said contact opening;
• depositing a barrier layer conformally over said glue layer;
• depositing a stress buffer layer comprising one of the group containing titanium silicide and cobalt silicide and having a thickness of between about 500 and 1500 Angstroms overlying said barrier layer wherein said stress buffer layer prevents volcano defects;
• and
• forming a tungsten plug within said contact opening to complete said formation of said tungsten plug metallization without volcano defects in said fabrication of said integrated circuit.

A method of forming tungsten plug metallization without volcano defects in the fabrication of integrated circuits comprising:

• providing semiconductor device structures in and on a semiconductor substrate;
• providing an insulating layer covering said semiconductor device structures wherein a contact opening is made through said insulating layer to said semiconductor substrate;
• depositing a titanium layer conformally over the surface of said insulating layer and within said contact opening;
• forming a titanium nitride layer overlying said titanium layer;
• depositing a stress buffer layer comprising one of the group containing tungsten silicide, and cobalt silicide and having a thickness of between about 500 and 1500 Angstroms overlying said titanium nitride layer wherein said stress buffer layer prevents the formation of stress cracks in said titanium nitride layer;
• and
• forming a tungsten plug within said contact opening using WF.sub.6 gas as a precursor wherein said prevention of said stress cracks prevents the penetration of said WF.sub.6 gas through said titanium nitride layer to said titanium layer and wherein said prevention of said penetration of said WF.sub.6 gas prevents the formation of said volcano defects to complete said formation of said tungsten plug metallization without volcano defects in said fabrication of said integrated circuit.