Method of phase shift mask fabrication comprising a tapered edge and phase conflict resolution
AssigneeMicron Technology, Inc.
InventorJ. Brett Rolfson
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AssigneeMicron Technology, Inc.
InventorJ. Brett Rolfson
Estimating the term…
A method for forming a phase shifting photomask is provided. The method includes forming a transparent substrate having a pattern of opaque features and determining areas of phase conflicts between the features. Phase shifters having a tapered edge are formed on selected portions of the features in the phase conflict areas while the remaining portion of the features remain unprotected. During a subsequent lithographic process using the photomask, the tapered edges of the phase shifters spread out the electric field so that an image corresponding to the tapered edges does not print at the target. This permits the phase shifters to be located without the constraints of an alternating aperture pattern. The phase shifters can be formed using an additive process in which a phase shift layer is deposited over the opaque features or using a subtractive process in which the substrate subjacent to the opaque features is etched.
A method for forming a phase shifting photomask comprising:
A method for forming a phase shifting photomask comprising:
A method for forming a phase shifting photomask comprising:
A method for forming a phase shifting photomask comprising:
Dependencies are inferred from the claim text.