Method for enhancing the toughness of CVD diamond
AssigneeGeneral Electric Company
InventorsThomas R. Anthony, William F. Banholzer, Clifford L. Spiro, Steven W. Webb, Bradley E. Williams
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Abstract
A method for treating as as-grown chemical vapor deposited (CVD) starting diamond film having stresses and containing voids, comprises the step of subjecting the diamond film to a temperature of above about 1000.degree. C. and a hydrostatic pressure of above about 3 kilobars.
Claims11
A process for treating an as-grown chemical vapor deposited (CVD) polycrystalline starting diamond film with a thickness of greater than 200 um and having residual starting stresses and containing voids, comprising the step of subjecting said diamond film to a temperature of above about 1000.degree. C. and a hydrostatic pressure of above about 3 kilobars, said temperature and hydrostatic pressure are in the graphite-stable region, wherein graphitization of said polycrystalline diamond film is prevented and said voids are substantially reduced in size.
Dependencies are inferred from the claim text.