Titanium nitride film-MOCVD method incorporating use of tetrakisdialkylaminotitanium as a source gas

Abstract

The present invention provides a method of depositing a titanium nitride thin film with good coverage even in a hole with a high aspect ratio by using tetrakisdialkylaminotitanium. In this method, a raw material gas of tetrakisdialkylaminotitanium is introduced into a reactor through a raw material gas introduction system. When the raw material gas is supplied to a substrate which is previously heated by a holder temperature control mechanism, predetermined thermally chemical reaction takes place to deposit a thin film consisting of titanium nitride as a main component. The pressure in the reactor is controlled by an exhaust system so as to be maintained at a predetermined value in the range of about 0.1 to 15 Pa.

Dependencies are inferred from the claim text.