Apparatus for vapor-phase epitaxial growth
AssigneeShin-Etsu Handotai Co., Ltd.
InventorHitoshi Habuka
Life of this patent
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Abstract
An apparatus for a vapor-phase epitaxial growth of a thin film on a substrate, which attains a decrease in the transition width, and at the same time, enables the thin film to be formed in a uniform thickness. This apparatus comprises a reaction vessel 18 of a flat shape, supply nozzles 15 for feeding a source gas 19 from a peripheral part of the reaction vessel 18, a susceptor 13 for holding a semiconductor single crystal substrate(s) 12 substantially horizontally, an infrared heating lamp 14, and a gas outlet 11 provided in a central part of an upper wall of the reaction vessel 18. Owing to this apparatus, the source gas 19 is gathered in a central part of the reaction vessel 18 without forming a vortex and then is discharged through the gas outlet 11.
Claims7
An apparatus for a vapor-phase epitaxial growth of a thin film comprising:
- a reaction vessel of a flat shape;
- gas supply means for feeding a source gas from a peripheral part of said reaction vessel;
- a susceptor for holding a semiconductor single crystal substrate(s) substantially horizontally;
- heating means;
- a reaction gas outlet means provided in a central part of an upper wall of said reaction vessel;
- wherein said reaction vessel is formed in the shape of a flat cylinder;
- and
- said gas supply means comprises a plurality of gas supply inlets adapted to feed the source gas in a circular direction of said reaction vessel.
An apparatus for a vapor-phase epitaxial growth of a thin film comprising:
- a reaction vessel of a flat shape;
- gas supply means for feeding a source gas from a peripheral part of said reaction vessel;
- a susceptor for holding a semiconductor single crystal substrate(s) substantially horizontally;
- heating means;
- a reaction gas outlet means provided in a central part of an upper wall of said reaction vessel for making the source gas go out upward through the gas outlet before the source gas forms a vortex.
Dependencies are inferred from the claim text.