Semiconductor device
AssigneeFujitsu Limited
InventorsTakashi Iwai, Motoo Nakano
Life of this patent
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Abstract
A semiconductor device has a first-conduction-type semiconductor substrate (19), an internal circuit including a vertical bipolar transistor (18) formed in a second-conduction-type semiconductor layer (20), and a protective element (14). The protective element comprises a first-conduction-type diffusion layer (22a) formed at an upper part of a second-conduction-type semiconductor layer (20a) disposed on the semiconductor substrate (19), and a second-conduction-type diffusion layer (27, 30) formed in the first-conduction-type diffusion layer (22a). The diffusion layer (27, 30) is at least partly deeper than an emitter diffusion layer (23) of the vertical bipolar transistor (18).
Claims5
A method of selecting an optimum protective element for an internal circuit of a semiconductor device, comprising the steps of:
- using a resistance value defined as:
- applied energy/.intg.(discharge current).sup.2 dt as an evaluation parameter that determines the electrostatic energy absorbing capacity of the protective element;
- and
- selecting a protective element, as the optimum protective element for the internal circuit, according to the resistance value.
A method of evaluating the withstand voltage of a protective element used for a semiconductor device having an internal circuit and a protective element and comprising a semiconductor substrate of a first conductivity type having an upper main surface;
- a semiconductor layer having an upper main surface and of a second conductivity type, opposite to the first conductivity type, formed on the upper main surface of the semiconductor substrate and defining an interface therebetween;
- the internal circuit comprising a vertical bipolar transistor formed in a corresponding, first region of the semiconductor layer and having an emitter diffusion layer which extends into the semiconductor layer from the upper main surface thereof to a first depth therewithin;
- the protective element being formed in a corresponding second region of the semiconductor layer, displaced from and electrically isolated from the first region thereof in which the internal circuit is formed, and comprising a first diffusion layer of the first conductivity type which extends into the semiconductor layer, from the upper main surface thereof and within the corresponding second region, to a second depth therewithin, and a second diffusion layer of the second conductivity type, formed in the first diffusion layer and extending from the upper main surface of the semiconductor layer into the first diffusion layer to a depth less than the second depth, at least a part thereof extending to a third depth which is greater than the first depth;
- and first and second buried, diffused regions formed on the upper main surface of the substrate at respective first and second portions of the interface thereof with, and corresponding to, the first and second regions of the semiconductor layer in which the internal circuit and the protective element, respectively, are formed, comprising the step of evaluating the withstand voltage by using a resistance value of:
- applied energy/.intg.(discharge current).sup.2 dt which is a parameter determining the electrostatic energy absorbing capacity of the protective element.
A method of evaluating the withstand voltage of a protective element used for a semiconductor device having a first-conduction-type semiconductor substrate, an internal circuit including a vertical bipolar transistor formed in a second-conduction-type semiconductor layer disposed on the semiconductor substrate, and wherein the protective element comprises a first-conductor-type diffusion layer formed at an upper part of the second-conduction-type semiconductor layer and a second-conduction type diffusion layer formed in the first-conduction-type diffusion layer and being at least partly deeper than an emitter diffusion layer of the vertical bipolar transistor, comprising the step of evaluating the withstand voltage by using a resistance value of:
- applied energy/.intg.(discharge current).sup.2 dt
- which is a parameter determining the electrostatic energy absorbing capacity of the protective element.
Dependencies are inferred from the claim text.