Controlled recrystallization of buried strap in a semiconductor memory device
AssigneesKabushiki Kaisha Toshiba, International Business Machines Corporation, Siemens Aktiengesellschaft
InventorsErwin Hammerl, Jack A. Mandelman, Herbert L. Ho, Junichi Shiozawa, Reinhard Johannes Stengl
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Abstract
A semiconductor memory device includes a trench formed in a semiconductor substrate. Conductive material is formed in the trench and is insulatively spaced from the semiconductor substrate to form a capacitor. A transfer gate transistor includes source/drain regions formed on a surface of the semiconductor substrate and a control gate which is insulatively spaced from a channel region between the source and drain regions. A buried strap electrically connects the capacitor to one of the source/drain regions of the transfer gate transistor. A portion of the buried strap includes recrystallized silicon.
Claims1
A semiconductor memory device, comprising:
- a semiconductor substrate;
- a trench formed in said semiconductor substrate;
- conductive material formed in said trench and insulatively spaced from semiconductor substrate to form a capacitor;
- a transfer gate transistor including source/drain regions formed on a surface of said semiconductor substrate and a control gate insulatively spaced from a channel region between said source/drain regions;
- and
- a buried strap electrically connecting said capacitor to one of said source/drain regions of said transfer gate transistor, a portion of said buried strap comprising recrystallized silicon.
Dependencies are inferred from the claim text.