Method for fabricating self-aligned semiconductor component
AssigneeMotorola, Inc.
InventorsCharles T. Lambson, Paul W. Sanders
Life of this patent
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Abstract
A self-aligned semiconductor component (10) includes a layer (14) having two openings (36, 38) and overlying a doped region (13) in a substrate (11). One (36) of the two openings (36, 38) is used to self-align a different doped region (22) and a portion (27) of an electrode (27, 31). The electrode (27, 31) has another portion (31) overlying the self-aligned portion (27) to increase the current carrying capacity of the electrode (27, 31). A different electrode is formed in the other one (38) of the two openings (36, 38) and has a smaller current carrying capacity than the other electrode (27, 31).
Claims19
A method of fabricating a self-aligned semiconductor component comprising the steps of:
- providing a substrate having a first doped region;
- forming a layer overlying the substrate, the layer having a first opening and a second opening, a portion of the second opening overlying a portion of the first doped region;
- using the first opening to form a second doped region self-aligned to the first opening;
- using the first opening to form a first electrical contact coupled to the second doped region, the first electrical contact self-aligned to the first opening;
- forming a second electrical contact in the second opening;
- and
- forming a metal line overlying and contacting the second electrical contact, wherein the first electrical contact in the first opening is substantially free of direct contact with a metal layer overlying the first opening.
A method of fabricating a semiconductor component comprising the steps of:
- providing a substrate;
- depositing a layer overlying the substrate;
- etching a first opening and a second opening in the layer;
- depositing a polysilicon layer in the first and second openings;
- doping the polysilicon layer in the second opening with a first dopant to form a doped polysilicon layer in the second opening;
- diffusing the first dopant out of the doped polysilicon layer;
- forming a first electrode self-aligned to the first opening;
- forming a first portion of a second electrode self-aligned to the second opening;
- and
- forming a second portion of the second electrode overlying the first portion of the second electrode.
A method of manufacturing a semiconductor component comprising:
- providing a substrate having a first doped region of a first conductivity type;
- forming an electrically insulating layer overlying the substrate, the electrically insulating layer having a first opening and a second opening, the first and second openings overlying the first doped region;
- forming a second doped region in the substrate and self-aligned to the first opening;
- and
- forming a first electrical contact coupled to the second doped region, located in the first opening, and self-aligned to the first opening.
Dependencies are inferred from the claim text.