Method of making a tooth shaped capacitor using ion implantation
AssigneeVanguard International Semiconductor Corporation
InventorHorng-Huei Tseng
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Abstract
A method of manufacturing a capacitor for use in semiconductor memories is disclosed herein. The present invention includes forming a silicon oxide layer as an etching mask to etch a polysilicon layer to form a bottom storage node of a capacitor. The silicon oxide layer is formed from the thermal annealing of oxygen doped dot silicon.
Claims13
A method for manufacturing a capacitor on a semiconductor substrate, said method comprising the steps of:
- forming a first conductive layer over said substrate;
- forming a dot silicon layer on said first conductive layer;
- doping oxygen into said dot silicon layer using an oblique angle;
- thermal annealing said semiconductor substrate in an inert gas ambient to convert said dot silicon layer into silicon oxide;
- removing a portion of said first conductive layer using said silicon oxide as a mask;
- patterning and etching said first conductive layer to form a first storage node of said capacitor;
- forming a dielectric layer on the surface of said first storage node of said capacitor;
- and
- forming a second conductive layer over said dielectric layer to act as a second storage node of said capacitor.
A method of forming a silicon structure, said method comprising the steps of:
- forming a silicon layer over a semiconductor substrate;
- forming a dot silicon layer on said silicon layer;
- doping oxygen into said dot silicon using an oblique implant;
- performing a thermal anneal to convert said dot silicon layer into silicon oxide;
- etching a portion of said silicon layer using said silicon oxide as an etching mask;
- removing said silicon oxide on said silicon layer;
- patterning and etching said silicon layer to form said silicon structure.
A method for manufacturing a capacitor on a semiconductor substrate, said method comprising the steps of:
- forming a first polysilicon layer over said substrate;
- forming a HSG-Si layer on said first polysilicon layer;
- doping oxygen into said HSG-Si layer at an oblique angle;
- thermally annealing HSG-Si layer to form silicon oxide;
- removing a portion of said first polysilicon layer using said silicon oxide as a mask;
- removing said silicon oxide layer;
- patterning and etching said first polysilicon layer to form a first electrode of said capacitor;
- forming a dielectric layer on the surface of said first electrode of said capacitor;
- and
- forming a second polysilicon layer over said dielectric layer to act as a second electrode of said capacitor.
Dependencies are inferred from the claim text.