Method for making dual gate insulating film without edge-thinning
AssigneeSamsung Electronics Co., Ltd.
InventorsJoo-Hyung Lee, Ju-Bum Lee, Jae-Hyung Lee
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Abstract
A dual gate insulating film of a thin film transistor (TFT) is disclosed in which edge-thinning is eliminated by forming a thermal oxide film after depositing an oxide film by a low temperature chemical vapor deposition (CVD) method. According to the disclosed dual gate insulating film and method for making the same, exposure of gate material on edges of the gate film is prevented, grooving of the active pattern of polycrystalline silicon is reduced, and the same electric and insulating characteristics as those of the conventional thermal oxide film are obtained.
Claims8
A method for forming a thin film transistor structure, comprising the steps of:
- forming an active pattern of amorphous silicon on a portion of a substrate;
- forming an insulating layer by first forming an oxide film on said active pattern of amorphous silicon and then growing a thermal oxide film so that a portion of said active pattern of amorphous silicon becomes said thermal oxide film, said growing step being controlled such that said amorphous silicon is transformed to polycrystalline silicon and said thermal oxide film totally encloses side and top edges of said active pattern.
Dependencies are inferred from the claim text.