US 5,670,388 A · Method of making contacted body silicon-on-insulator field effect transistor

Abstract

Structures and methods are presented for forming a body-substrate connector for an SOI FET. The connector is formed substantially co-aligned with the gate conductor on a side of the device that does not interfere with source and drain. The body is thus held close to the substrate potential and the connector provides a path for majority carriers to quickly leave the body. By contacting the body of the SOI MOSFET device in a manner that does not perturb the charge imaged by the gate, parasitic bipolar effects are eliminated while maintaining the desirable attributes of SOI MOSFET devices, such as low substrate bias sensitivity and steep sub-threshold slope. By forming the connector substantially co-aligned with the gate conductor the connection uses little or no surface area.

Claims18

Dependent claims

A method of forming a silicon-on-insulator FET comprising the steps of:

a) providing a semiconductor substrate having a buried dielectric, said buried dielectric defining lower and upper regions of said substrate;
b) forming a connection between said lower and upper regions of said substrate;
c) forming a gate dielectric on said upper region;
d) forming a gate on said gate dielectric, said gate having a first side, a second side, and a third side;
and
e) forming a source and a drain in said upper region and leaving a body therebetween, wherein said source is aligned to said first side and said drain is aligned to said second side;
wherein said step (b) involves forming said connection substantially co-aligned with said third side of said gate.

4 more elements

Dependencies are inferred from the claim text.

Method of making contacted body silicon-on-insulator field effect transistor

Life of this patent

Method of making contacted body silicon-on-insulator field effect transistor

Life of this patent

Abstract

Claims18