Solid-state image sensor with element isolation region of high impurity concentration and method of manufacturing the same

Abstract

The solid-state image sensor disclosed has a photodiode including a P-type layer provided on a surface of a semi-conductor substrate, an N-type layer provided in the N-type layer, and a P.sup.+ -type region which is disposed on a surface of the N-type layer. A P.sup.++ -type region is disposed in a region surrounding the photodiode excepting in a read region for reading out charges in the photodiode, and this P.sup.++ -type region has a higher impurity concentration and a greater depth than the P.sup.+ -type region. That is, the P.sup.++ -type region which isolates photodiode regions and vertical CCD regions from one another is formed as a high impurity concentration diffusion layer or an electron trap region containing a large amount of electron trap centers. Thus, it is possible to reduce smear generation in unit pixels and to produce sharp images.

Dependencies are inferred from the claim text.