Power semiconductor component with transparent emitter and stop layer

A power semiconductor component, in particular for high blocking voltages comprising:

• a semiconductor substrate into which a number of layers of first and second conductivity types are diffused between a first main area and a second main area;
• a cathode electrode formed on the first main area, and an anode electrode formed by a metallization covering the second main area;
• a transparent emitter of said first conductivity type diffused in the substrate adjacent the anode electrode, an impurity concentration and a thickness of said transparent emitter being chosen such that at least 50% of a total current flowing through the transparent emitter is covered by minority carriers;
• and
• a stop layer of said second conductivity type formed between the transparent emitter and the cathode electrode for reducing the thickness of the semiconductor substrate and for minimizing switching losses.