Method of filling of contact openings and vias by self-extrusion of overlying compressively stressed matal layer
AssigneeApplied Materials, Inc.
InventorsZheng Xu, Tse-Yong Yao, Hoa Kieu, Julio Aranovich
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AssigneeApplied Materials, Inc.
InventorsZheng Xu, Tse-Yong Yao, Hoa Kieu, Julio Aranovich
Estimating the term…
A process and resulting structure are described for using a metal layer formed over an insulating layer as both the filler material to fill openings in the insulating layer and as the patterned metal interconnect or wiring harness on the surface of the insulating layer. The process includes the steps of forming a compressively stressed metal layer over an insulating layer having previously formed openings therethrough to the material under the insulating layer; forming a high tensile strength cap layer of material over the compressively stressed metal layer; and then heating the structure to a temperature sufficient to cause the compressively stressed metal layer to extrude down into the openings in the underlying insulating layer. The overlying cap layer has sufficient tensile strength to prevent or inhibit the compressive stressed metal layer from extruding upwardly to form hillocks which would need to be removed, i.e., by planarization. The temperature to which the compressively stressed metal layer is subsequently heated to cause it to extrude should be less than the melting point of the compressively stressed metal layer.
A process for filling openings in an insulating layer on an integrated circuit structure with metal to provide an electrical connection between one or more structures beneath the insulating layer and one or more contacts above the insulating layer which comprises:
A process for filling openings in an insulating layer on an integrated circuit structure with metal to provide an electrical connection between one or more structures beneath the insulating layer and one or more metal contacts above the insulating layer which comprises:
In the formation of integrated circuit structures, a process for filling with metal openings in an insulating layer formed over underlying integrated circuit structure using a metal layer initially formed over said insulation layer which comprises:
Dependencies are inferred from the claim text.