Method for fabricating multilayer semiconductor device

A method for fabricating a multilayer semiconductor device, comprising the steps of:

• providing an aluminum layer on a substrate;
• forming a barrier layer on the aluminum layer;
• forming a cap-layer on the barrier layer, the cap-layer is selected from the group consisting of TiW and W (tungsten);
• forming an insulation layer on the cap-layer;
• selectively etching the insulation layer and the cap-layer using the barrier layer as a stopper to form a through-hole;
• and
• selectively removing the barrier layer at the bottom of the through-hole from the conductive layer.

A method for fabricating a multilayer semiconductor device, comprising the steps of:

• providing an Si semiconductor substrate;
• forming a first insulation layer on the Si semiconductor substrate;
• forming an aluminum conductive layer on the first insulation layer;
• forming a barrier layer on the aluminum layer, the barrier layer selected from the group consisting of TiN, TaN and ZrN;
• forming a second insulation layer on the barrier layer;
• forming a resist pattern on the second insulation layer;
• selectively etching the second insulation layer using the resist pattern as a mask and the barrier layer as an etch stop form a through-hole thereon;
• and
• selectively removing the barrier layer at the bottom of the through-hole from the aluminum layer.