Method for forming a semiconductor device electrode which also serves as a diffusion barrier

Abstract

A capacitor element includes a pervoskite dielectric film and an electrode having excellent electrical contact characteristic and improved adhesion to an underlying surface. In a method for fabricating the electrode, a group IVB or VB refractory metal transition element is deposited on a silicon substrate or a silicon oxide layer. A group VIII near noble metal transition element is then deposited on the group IVB or VB refractory metal layer. The substrate and deposited layers is then subjected to a heat treatment in an ammonia ambient to form a refractory metal nitride layer between the refractory metal and near noble metal layers. In addition, if the refractory metal is deposited on a silicon substrate, a silicide layer is formed between the refractory metal layer and the substrate during heat treatment. If, however, the refractory metal layer is provided on a silicon oxide layer, a refractory metal oxide is formed during the heat treatment. Examples of group IVB refractory metal transition elements include Ti, Zr and Hf; examples of group VIII refractory metal transition elements include Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, and Pt; and examples of the group VB refractory metals include V, Nb, and Ta.

Dependencies are inferred from the claim text.