Silicon-silicon-germanium heterojunction bipolar transistor fabrication method

A silicon/silicon-germanium bipolar transistor fabrication method, comprising:

• growing a silicon/silicon-germanium film on a semiconductor substrate wherein a first, second and third conductive layers are sequentially formed and a device isolation is achieved;
• forming a first insulator film, a metallic silicide film and a second insulator film sequentially on said grown silicon/silicon-germanium film;
• etching said second insulator film, said metallic silicide film and said first insulator film consecutively using a mask, and forming a fourth conductive layer so as to connect said metallic silicide film serving as a base electrode to said silicon/silicon-germanium film;
• removing said second insulator film and said metallic silicide film provided on the emitter region and forming side wall polycrystalline silicon spacers;
• insulating and emitter-base layer in accordance with forming an oxide film by selectively oxidizing said exposed fourth conductive layer and said side wall polycrystalline silicon spacers;
• forming a fifth conductive layer after etching said first insulator film exposed on said emitter;
• and,
• depositing an insulation film, forming a contact hole and performing metallic wiring process.