Attenuated phase shift mask and method of manufacture thereof

A method for manufacturing an attenuated Phase Shift Mask (PSM) comprising:

• providing a transparent substrate;
• forming upon the transparent substrate a tantalum-silicon oxide blanket semi-transparent shifter layer, the tantalum-silicon oxide blanket semi-transparent shifter layer having a formula,
• Ta.sub.x Si.sub.y O.sub.1-x-y
• wherein 0.1<x<0.3 and 0.03<y<0.1;
• and,
• patterning the tantalum-silicon oxide blanket semi-transparent shifter layer to form a tantalum-silicon oxide patterned semi-transparent shifter layer.

An attenuated Phase Shift Mask (PSM) blank comprising:

• a transparent substrate;
• and,
• a tantalum-silicon oxide blanket semi-transparent shifter layer upon the transparent substrate, the tantalum-silicon oxide blanket semi-transparent shifter layer having a formula,
• Ta.sub.x Si.sub.y O.sub.1-x-y
• wherein 0.1<x<0.3 and 0.03<y<0.1.

An attenuated Phase Shift Mask (PSM) comprising:

• a transparent substrate;
• and
• a tantalum-silicon oxide patterned semi-transparent shifter layer formed upon the transparent substrate, the tantalum-silicon oxide patterned semi-transparent shifter layer having a formula,
• Ta.sub.x Si.sub.y O.sub.1-x-y
• wherein 0.1<x<0.3 and 0.03<y<0.1.