In-situ wafer temperature control apparatus for single wafer tools

In a temperature control apparatus for single wafer etching tools of the type having a cathode electrode, an isolation layer, and chuck means, the isolation layer disposed on the cathode electrode and the chuck means disposed on the isolation layer, wherein the chuck means supports a wafer having a center area and an outer area, the improvement comprising:

• a Peltier element layer disposed between the isolation layer and the chuck means, said Pettier element layer having two closed loops, wherein a center area closed loop connects a plurality of Peltier elements corresponding to said center area of said wafer, wherein an outer area closed loop connects a plurality of Peltier elements corresponding to said outer area of said wafer;
• and
• means coupled to each of said two closed loops for providing a control voltage to each of said two closed loops indicative of a given temperature;
• wherein said center area closed loop controls a temperature associated with said center area of said wafer and wherein said outer area closed loop controls a temperature associated with said outer area of said wafer.

A temperature control apparatus for single wafer etching tools, comprising:

• a chamber and a temperature control support, said temperature control support housed within said chamber, said temperature control support having a cathode electrode, an isolation layer, and chuck means, wherein said isolation layer is disposed on said cathode electrode and said chuck means is disposed on said isolation layer;
• a through-hole formed within said cathode electrode, said through-hole forming part of a closed loop cooling line, said closed loop cooling line including a pump and a reservoir, wherein a coolant is pumped through said closed loop cooling line for cooling said temperature control support;
• said chuck means supporting a wafer having a center area and an outer area, said center area and said outer area each having a specific temperature;
• a plurality of interstices formed between said chuck means and said wafer, wherein a given mount of Helium is provided at said plurality of interstices;
• a Peltier element layer disposed between the isolation layer and the chuck means, said Peltier element layer comprising two closed loops of connected Peltier elements, wherein a center area closed loop connects a plurality of Peltier elements corresponding to said center area of said wafer, wherein an outer area closed loop connects a plurality of Peltier elements corresponding to said outer area of said wafer;
• and
• means coupled to each of said two closed loops for providing a control voltage to each of said two closed loops indicative of a given temperature;
• wherein said center area closed loop controls said temperature of said center area of said wafer and wherein said outer area closed loop controls said temperature of said outer area of said wafer.