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US 5,665,647 AGranted
Making metal silicide using oxide film
AssigneeNEC Corporation
InventorTakashi Ishigami
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes the steps of forming a silicon oxide film having a thickness of 5 nm or less on a silicon substrate or polysilicon film with a solution exhibiting an oxidation effect, forming a metal film on the silicon oxide film, and forming a silicide layer on the upper surface of the silicon substrate or polysilicon film by performing predetermined heat treatment.
Claims8
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a silicon oxide film having a thickness of not more than 5 nm on a silicon substrate with a solution exhibiting an oxidation effect;
- forming a metal film on the silicon oxide film;
- and
- forming a silicide layer on an upper surface of the silicon substrate by performing heat treatment.
1 more element
A method of manufacturing a semiconductor device, comprising the steps of:
- forming an oxide film having a thickness of not more than 5 nm on a polysilicon film with a solution exhibiting an oxidation effect;
- forming a metal film on the oxide film;
- and
- forming a silicide layer on an upper surface of the polysilicon film by performing heat treatment.
1 more element
Dependencies are inferred from the claim text.