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US 5,665,631 AGranted
SOI substrate manufacturing method
AssigneeSamsung Electronics Co., Ltd.
InventorsByoung-hun Lee, Chi-jung Kang, Kyung-wook Lee, Gi-ho Cha
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Abstract
A SOI substrate manufacturing method which corrects the warpage in the SOI substrate by varying the thickness of a semiconductor material layer additionally formed over the bonded combination of a semiconductor substrate and supporting substrate.
Claims12
A method of manufacturing a SOI substrate, comprising the steps of:
- bonding a supporting substrate to a semiconductor substrate;
- forming an oxidized layer over the exposed surfaces of the bonded supporting substrate and semiconductor substrate;
- forming a semiconductor material layer of first thickness over the oxidized layer;
- removing an upper portion of the semiconductor substrate and portions of the oxidized layer and semiconductor material layer covering the removed portion of the semiconductor substrate to produce a modified semiconductor substrate having a substantially planar upper surface, and a modified semiconductor material layer having first thickness.
1 more element
Dependencies are inferred from the claim text.