Method of forming conductive amorphous-nitride barrier layer for high-dielectric-constant material electrodes
AssigneeTexas Instruments Incorporated
InventorScott R. Summerfelt
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Abstract
A preferred embodiment of this invention comprises an oxidizable layer (e.g. TiN 50), an amorphous nitride barrier layer (e.g. Ti--Si--N 34) overlying the oxidizable layer, an oxygen stable layer (e.g. platinum 36) overlying the amorphous nitride layer, and a high-dielectric-constant material layer (e.g. barium strontium titanate 38) overlying the oxygen stable layer. The amorphous nitride barrier layer substantially inhibits diffusion of oxygen to the oxidizable layer, thus minimizing deleterious oxidation of the oxidizable layer.
Claims18
A method of forming a microelectronic structure, said method comprising:
- (a) forming an oxidizable layer;
- (b) forming a ternary or greater amorphous nitride layer on said oxidizable layer, wherein said amorphous nitride layer is selected from the group consisting of:
- Ti--Si--N, Ta--Si--N, Ta--B--N, Ti--B--N, and combinations thereof;
- (c) forming an oxygen stable layer on said amorphous nitride layer, wherein said oxygen stable layer is selected from the group consisting of:
- platinum, palladium, rhenium, rhodium, ruthenium oxide, tin oxide, indium oxide, rhenium oxide, osmium oxide, rhodium oxide, iridium oxide, and combinations thereof;
- and
- (d) forming a layer of a high-dielectric-constant material on said oxygen stable layer, wherein the amorphous nitride layer substantially inhibits diffusion of oxygen to the oxidizable layer, whereby deleterious oxidation of the oxidizable layer is reduced.
A method of forming a microelectronic structure, said method comprising:
- (a) forming a TiN layer;
- (b) forming a Ti--Si--N layer on said TiN layer;
- (c) forming a Pt layer on said Ti--Si--N layer;
- and
- (d) forming a barium strontium titanate layer on said Pt layer, wherein said Ti--Si--N layer substantially inhibits diffusion of oxygen to said TiN layer.
Dependencies are inferred from the claim text.