Process of manufacturing a semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsKoji Kimura, Hiroshi Naruse
Life of this patent
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Abstract
In the Bi-CMOS process of manufacturing a semiconductor device by an effective combination of a bipolar transistor manufacturing process and a CMOS transistor manufacturing process in the case of the formation of a silicide film on a Bi-CMOS device, in which the bipolar transistor having an inner base region made of a silicon film grown by epitaxy and the MOS transistor having silicide formed on the gate electrode, source region and drain region in a self-aligned manner therewith are formed on the same semiconductor substrate, while the silicon film of the inner base region is epitaxially grown in a step, a silicon film is also epitaxially grown on the source/drain regions at the same time in the same step.
Claims6
A process of manufacturing a semiconductor device comprising the steps of:
- forming a first insulating film in a bipolar transistor formation region of a main surface of a silicon semiconductor substrate;
- forming a second insulating film constituting a gate oxide film in a MOS transistor formation region on the main surface of the silicon semiconductor substrate;
- forming a silicon gate electrode on the gate oxide film of the MOS transistor formation region;
- forming a base electrode made of silicon on the first insulating film in the bipolar transistor formation region;
- coating a side wall and an upper surface of the gate electrode and base electrode with a third insulating film;
- forming source/drain regions in the MOS transistor formation region;
- removing a portion of the first insulating film which is in an emitter region and contacts the lower surface of the base electrode, thereby exposing a portion of the main surface of the semiconductor substrate facing the removed region;
- epitaxially growing a silicon film on the exposed portion on the main surface of the semiconductor substrate and on the source/drain regions, thereby making the silicon film of the exposed portion on the main surface of the semiconductor substrate serving as a base region;
- forming an emitter region by diffusing impurities into the base region;
- forming a silicon emitter electrode on the emitter region;
- depositing a metal layer on the source/drain regions, gate electrode, base electrode and emitter electrode;
- and
- forming metal silicide in a self-aligned manner with the source/drain regions, gate electrode, base electrode and emitter electrode, by thermal heating the metal layer to react the heated metal layer with silicon of the source/drain regions, gate electrode, base electrode and emitter electrode.
Dependencies are inferred from the claim text.