Method for fabricating a semiconductor with a photomask
AssigneeHyundai Electronics Industries Co., Ltd.
InventorJoon Hwang
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Abstract
A photomask is fabricated by forming a scribe line at the four sides of a product die pattern and forming vernier patterns at four corners. The vernier pattern is formed of a regular square area and a regular square band-shaped area. A reticle rotation error of an exposer, X and Y-axis stepping error, a bending error of the lens and a pattern error formed on the wafer due to the fabricating error of the photomask can be found by developing the overlapped vernier patterns which are exposed several times using the photomask.
Claims2
A method for fabricating a semiconductor with scribe lines using a photomask having vernier patterns in scribe line areas, comprising the steps of:
- providing the photomask with said vernier patterns in each corner of four sides of said scribe line areas;
- exposing the photomask and overlapping during the exposing the vernier patterns to form an overlapped exposed pattern in a portion of the scribe lines on the semiconductor;
- and
- measuring the overlapped exposed pattern to inspect errors.
Dependencies are inferred from the claim text.