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AssigneeSeiko Instruments Inc.
InventorsTadao Iwaki, Tsuneo Yamazaki, Katsuki Matsushita, Shigeru Senbonmatsu, Ryuichi Takano
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A semiconductor substrate is provided which has a semiconductor on insulator structure but in which can be formed a thin film integrated circuit having electrical characteristics and microstructure equal to or of greater density than a silicon integrated circuit formed using a bulk single crystal silicon wafer. The semiconductor substrate has a structure which is formed of a sequentially layered single crystal silicon thin film sandwiched between a thermally oxidized silicon film and a silicon oxide or silicon nitride film, an element smoothing layer, a fluoro-epoxy series resin adhesive layer, and a supporting substrate. The single crystal silicon thin film can have integrated circuit devices formed in a sub-micron geometry similar to that of a bulk single crystal silicon. A transparent glass or a bulk single crystal silicon wafer can be used as a supporting substrate. Therefore the semiconductor thin film can integrate a highly fine, dense and compact semiconductor integrated circuit or semiconductor optical element. The semiconductor thin film element has a transparent optical detection region or optical modulation region with 100 million pixels or more.
A semiconductor substrate comprising:
A liquid crystal light valve comprising:
A semiconductor optical detector comprising:
A semiconductor substrate comprising:
A semiconductor substrate comprising:
A semiconductor substrate comprising:
Dependencies are inferred from the claim text.