Insulated gate semiconductor device and driving circuit device and electronic system both using the same

A semiconductor device comprising:

• a first terminal;
• a second terminal;
• a third terminal;
• an insulated gate transistor having a current path coupled between said second terminal and said third terminal, and a gate coupled to said first terminal;
• a temperature detecting circuit including a temperature detecting element for detecting a temperature of said semiconductor device, wherein said temperature detecting circuit outputs a temperature detecting signal when the temperature of said semiconductor device is greater than or equal to a predetermined value, and wherein said temperature detecting element is coupled between said first terminal and said third terminal;
• a first switch circuit having a first current path coupled between said first terminal and said third terminal, and a first control terminal coupled to receive said temperature detecting signal, the first switch circuit being turned on so as to cutoff the insulated gate transistor in response to said temperature detecting signal;
• and
• a constant-voltage circuit for generating an operating voltage of the temperature detecting circuit, and which is coupled between said first terminal and said third terminal;
• wherein the constant-voltage circuit includes a first diode having a first anode coupled to the first terminal and a first cathode coupled to the third terminal;
• wherein the temperature detecting element includes a second diode having a second anode coupled to a second control terminal and a second cathode coupled to the third terminal;
• wherein the temperature detecting circuit further includes:
• a second switch circuit having a second current path coupled between the first terminal, the third terminal, and the first control terminal, and having the second control terminal, the second switch circuit generating the temperature detecting signal:
• and
• a first resistor coupled between the second control terminal and the first terminal;
• and wherein the temperature detecting element is coupled between the second control terminal and the third terminal.

A semiconductor device comprising:

• a first terminal;
• a second terminal;
• a third terminal;
• an insulated gate transistor having a current path coupled between said second terminal and said third terminal and a gate coupled to said first terminal;
• a temperature detecting device adapted to output a temperature detecting signal when the temperature of said device is greater than or equal to a predetermined value;
• a switch circuit having a current path coupled between said first terminal and said third terminal, and a control terminal coupled to receive said temperature detecting signal;
• and
• a pad formed over a semiconductor substrate in which said insulated gate transistor, said temperature detecting device, and said switch circuit are formed, said pad being coupled to said third terminal;
• wherein said pad is arranged substantially at a center of said semiconductor substrate;
• and
• wherein said temperature detecting device is arranged adjacent to said pad.

A semiconductor device comprising:

• an insulated gate transistor;
• a hysteresis-type cutoff circuit adapted to cut off said insulated gate transistor when a temperature of said semiconductor device is higher than or equal to a first temperature, and adapted to bring said insulated gate transistor into a conductive state when a temperature of said semiconductor device is lower than or equal to a second temperature;
• and
• a latch circuit adapted to continuously hold said insulated gate transistor at a cutoff state when a temperature of said device is changed to a temperature greater than or equal to a third temperature higher than said first temperature.

A semiconductor device comprising,

• an insulated gate transistor;
• a hysteresis-type cutoff circuit adapted to cut off said insulated gate transistor when a temperature of said device is higher than or equal to a first temperature, and adapted to bring said insulated gate transistor into a conductive state when a temperature of said device is lower than or equal to a second temperature;
• a current detecting circuit adapted to detect a current of said insulated gate transistor;
• and
• an overcurrent protection circuit adapted to render said insulated gate transistor non-conductive when said current of said insulated gate transistor is larger than or equal to a predetermined value.

A semiconductor device comprising:

• an insulated gate transistor;
• a hysteresis-type cutoff circuit adapted to cut off said insulated gate transistor when a current of said insulated gate transistor is higher than or equal to a first value, and adapted to bring said insulated gate transistor into a conductive state when a current of said insulated gate transistor is lower than or equal to a second value which is smaller than said first value;
• and
• a latch circuit adapted to continuously hold said insulated gate transistor at a cutoff state when a temperature of said device is changed to a predetermined temperature.