Resistor structure and integrated circuit

An integrated circuit, comprising:

• a first conductive material having first and second terminals and a resistivity;
• a second conductive material having first and second terminals;
• and
• an insulation material disposed between and electrically isolating the first and second conductive materials, wherein the first conductive material comprises an etch control layer and a layer of resistive material, the etch control layer disposed on the insulating material and the layer of resistive material being disposed on the etch control layer, and wherein a current applied through the second conductive material heats the first conductive material, thereby annealing the first conductive material and adjusting the resistivity of the first conductive material.

A resistor structure, comprising:

• a conductive layer having first and second terminal regions;
• a layer of insulating material disposed on the conductive layer;
• an etch control layer disposed on the layer of insulating material;
• a layer of resistive material disposed on the etch control layer, wherein the etch control layer and the layer of resistive material cooperate to form a resistor having first and second resistor terminals and wherein the resistor is electrically decoupled from the conductive layer by the layer of insulating material;
• first and second electrodes, wherein the first electrode contacts a first portion of the layer of resistive material and the second electrode contacts a second portion of the layer of resistive material;
• and
• third and fourth electrodes, wherein the third electrode contacts a first portion of the conductive layer and the fourth electrode contacts a second portion of the conductive layer.