Semiconductor device having cap-metal layer

A semiconductor device including an interconnection layer to form an interconnection having a desired pattern, comprising:

• an insulating layer;
• a conductive layer deposited over said insulating layer;
• and
• a layer deposited on said conductive layer, for suppressing the reflection of light beams during the patterning of said interconnection layer, said reflection suppressing layer including an aluminum-titanium alloy layer and a titanium nitride layer deposited on said aluminum-titanium alloy layer, a substantial majority of said titanium of said aluminum-titanium alloy layer being present in said aluminum-titanium alloy layer when said aluminum-titanium alloy layer is deposited on said conductive layer as part of said layer for said suppressing of the reflection of light beams, and in which said titanium of said aluminum-titanium alloy layer is present in a sufficient amount for said suppressing of the reflection of light beams at the time said aluminum-titanium layer is deposited;
• wherein the interconnection layer comprises said conductive layer, said aluminum-titanium alloy layer and said titanium nitride layer.

A semiconductor device including an interconnection layer to form an interconnection having a desired pattern, comprising:

• an insulating layer;
• a conductive layer deposited over said insulating layer;
• and
• a layer deposited on said conductive layer, for suppressing reflection of light beams at a time of patterning the interconnection layer, said reflection suppressing layer being a single layer consisting essentially of an aluminum-titanium based intermetallic compound selected from the group consisting of Al.sub.3 Ti, AlTi.sub.3 and AlTi, a substantial majority of said titanium of said aluminum-titanium alloy layer being present in said aluminum-titanium alloy layer when said aluminum-titanium alloy layer is deposited on said conductive layer as part of said layer for said suppressing of the reflection of light beams, and in which said titanium of said aluminum-titanium alloy layer is present in a sufficient amount, when said aluminum-titanium alloy layer is deposited, for said suppressing of the reflection of light beams;
• wherein the interconnection layer comprises said conductive layer and said reflection suppressing layer.

A semiconductor device comprising:

• a first conductive layer made of one of aluminum and an aluminum alloy;
• an insulating layer deposited over said first conductive layer and having a contact hole formed through said insulating layer;
• a second conductive layer deposited over said insulating layer;
• and
• a stacked filler for filling said contact hole, wherein said stacked filler includes a titanium layer formed on said first conductive layer, a titanium nitride layer formed on the titanium layer, and a connecting insertion provided on the titanium nitride layer to electrically connect said first and second conductive layers.

A semiconductor device including an interconnection layer patterned by photolithography to form an interconnection having a desired pattern, comprising:

• an insulating layer;
• a conductive layer deposited over said insulating layer, said conductive layer being made of conductive metal selected from the group consisting of gold (Au), silver (Ag), copper (Cu), aluminum (Al), aluminum-silicon-copper alloy, aluminum-silicon alloy, aluminum-copper alloy and aluminum alloy including any one of Magnesium (Mg), Palladium (Pd), Scandium (Sc) and Hafnium (Hf);
• and
• a layer deposited on said conductive layer, for suppressing the reflection of light beams during the patterning of said interconnection layer, said reflection suppressing layer including an aluminum-titanium alloy layer and a titanium nitride layer deposited on said aluminum-titanium alloy layer,
• wherein the interconnection layer comprises said conductive layer, said aluminum-titanium alloy layer and said titanium nitride layer.

A semiconductor device including an interconnection layer patterned by photolithography to form an interconnection having a desired pattern, comprising:

• an insulating layer;
• a conductive layer deposited over said insulating layer, said conductive layer being made of conductive metal selected from the group consisting of gold (Au), silver (Ag), copper (Cu), aluminum (Al), aluminum-silicon-copper alloy, aluminum-silicon alloy, aluminum-copper alloy and aluminum alloy including any one of Magnesium (Mg), Palladium (Pd), Scandium (Sc) and Hafnium (Hf);
• and
• a layer deposited on said conductive layer, for suppressing reflection of light beams during the patterning of said interconnection layer, said reflection suppressing layer being a single layer consisting essentially of an aluminum-titanium based intermetallic compound selected from the group consisting of Al.sub.3 Ti, AlTi.sub.3 and AlTi,
• wherein the interconnection layer comprises said conductive layer and said reflection suppressing layer.