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US 5,635,426 AGranted
Method of making a semiconductor device having a silicide local interconnect
AssigneeFujitsu Limited
InventorsHiromi Hayashi, Atsuo Fushida, Tetsuo Izawa, Masaki Katsube, Tatsuya Yamazaki
Life of this patent
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Abstract
On a semiconductor substrate with an exposed silicon region, a metal layer such as Co is deposited and a silicide layer is formed by heat treatment. Thereafter, a metal layer such as Ni and a silicon layer are deposited, and one of them is patterned. The metal layer and silicon layer are heated for silicification to form a local interconnect. A semiconductor device manufacturing method is provided which uses salicide technique and can form a local interconnect of good quality.
Claims31
A method of manufacturing a semiconductor device comprising the steps of:
- forming a locally oxidized field oxide film by selectively oxidizing the surface of a silicon semiconductor substrate and defining a silicon surface surrounded at least partially by a locally oxidized field oxide film;
- depositing a film of a first metal on the substrate, the first metal film covering said silicon surface and said locally oxidized field oxide film;
- forming a silicon electrode pattern on said locally oxidized field oxide film;
- heating said substrate to silicify said first metal film with said silicon surface and form a first silicide layer and to silicify said first metal film with said silicon electrode pattern to form a second silicide layer;
- removing unreacted part of said first metal film;
- depositing a second metal film of a second metal, said second metal being different from said first metal and capable of forming said second silicide at a temperature where said first metal does not react with silicon, on the substrate, the second metal film covering said first silicide layer and said locally oxidized field oxide film;
- depositing a silicon film on said second metal film, and patterning said silicon film to form a silicon film pattern extending from a region over the surface of said first silicide layer, through a region over said locally oxidized field oxide film, to a region over said second silicide layer;
- heating said substrate to silicify said second metal film with said silicon film pattern and form a third silicide layer, without enhancing silicidation of said first silicide;
- and
- removing unreacted part of said second metal film.
7 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a locally oxidized field oxide film by selectively oxidizing the surface of said silicon semiconductor substrate and defining a silicon surface surrounded at least partially by said locally oxidized field oxide film;
- depositing a first metal film of a first metal on the substrate, the first metal film covering said silicon surface and said locally oxidized field oxide film;
- heating said substrate to silicify said first metal film with said silicon surface and form a first silicide layer;
- and
- removing unreacted part of said first metal film;
- depositing a silicon film covering said first silicide layer and said locally oxidized field oxide film;
- depositing a second metal film of a second metal on said silicon film, and patterning said second metal film to form a second metal film pattern extending from a region over the surface of said first silicide layer to a region over said locally oxidized field oxide film;
- heating said substrate to silicify said second metal film pattern with said silicon film and form said second silicide layer;
- and
- removing unreacted part of said silicon film.
7 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a locally oxidized field oxide film by selectively oxidizing the surface of said silicon semiconductor substrate and defining a silicon surface surrounded at least partially by said locally oxidized field oxide film;
- depositing a first metal film of a first metal on the substrate, the first metal film covering said silicon surface and said locally oxidized field oxide film;
- depositing a second metal film on said first metal film;
- depositing a silicon film on said second metal, and patterning said silicon film to form a silicon film pattern extending from a region over said silicon surface to a region over said locally oxidized field oxide film;
- heating said substrate to silicify said first metal film with said silicon surface and said second metal film with said silicon film pattern;
- and
- removing unreacted parts of said first and second metal films.
4 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a locally oxidized field oxide film by selectively oxidizing the surface of said silicon semiconductor substrate and defining a silicon surface surrounded at least partially by said locally oxidized field oxide film;
- depositing a first metal film of said first metal on the substrate, the first metal film covering said silicon surface and said locally oxidized field oxide film,
- depositing a second metal film on said first metal film, said second metal film being made of metal different from said first metal, said first and second metal being capable of silicifying with silicon;
- depositing a silicon film on said second metal film, and patterning said silicon film to form a silicon film pattern extending from a region over said silicon surface to a region over said locally oxidized field oxide film;
- heating said substrate to silicify said first metal film with said silicon surface and said second metal film with said silicon film pattern;
- and
- removing unreacted parts of said first and second metal films.
4 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a locally oxidized field oxide film by selectively oxidizing the surface of a silicon semiconductor substrate and defining a silicon surface surrounded at least partially by a locally oxidized field oxide film;
- forming a silicon electrode pattern on said locally oxidized field oxide film;
- depositing a first nickel film on the substrate, the first nickel film covering said silicon surface and said locally oxidized field oxide film;
- heating said substrate to silicify said first nickel film with said silicon surface and form a first nickel silicide layer and to silicify said first metal film with said silicon electrode pattern to form a second nickel silicide layer;
- removing unreacted part of said first nickel film;
- depositing a second nickel film on the substrate, the second nickel film covering said first nickel silicide layer and said locally oxidized field oxide film;
- depositing a silicon film on said second nickel film, and patterning said silicon film to form a silicon film pattern extending from a region over the surface of said first nickel silicide layer, through a region over said locally oxidized field oxide film, to a region over said second nickel silicide layer;
- heating said substrate to silicify said second nickel film with said silicon film pattern and form a third nickel silicide layer;
- and
- removing unreacted part of said second nickel film.
7 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a locally oxidized field oxide film by selectively oxidizing the surface of said silicon semiconductor substrate and defining a silicon surface surrounded at least partially by said locally oxidized field oxide film;
- depositing a first nickel film on the substrate, the first nickel film covering said silicon surface and said locally oxidized field oxide film;
- heating said substrate to silicify said first nickel film with said silicon surface and form a first nickel silicide layer;
- and
- removing unreacted part of said first nickel film;
- depositing a silicon film covering said first silicide layer and said locally oxidized field oxide film;
- depositing a second nickel film on said silicon film, and patterning said second nickel film to form a second nickel film pattern extending from a region over the surface of said first nickel silicide layer to a region over said locally oxidized field oxide film;
- heating said substrate to silicify said second nickel film pattern with said silicon film and form a second nickel silicide layer;
- and
- removing unreacted part of said silicon film.
7 more elements
Dependencies are inferred from the claim text.