Method of making a semiconductor device having a capacitive layer
AssigneeTexas Instruments Incorporated
InventorYasushiro Nishioka
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Abstract
A method for making ferroelectric thin film form capacitors that maintains the insulating characteristics of the thin film capacitors formed on the semiconductor devices while reducing the leakage current and ensuring a yield sufficient for applications to ULSIs such as DRAMs. A metal or oxide thereof, which contains structural elements of a metal forming the ferroelectric thin film, is formed as islands in the initial stage of formation or during the formation of a ferroelectric thin film in semiconductor devices. This suppresses the formation of columnar crystals.
Claims5
A method for fabricating semiconductor devices containing a ferroelectric thin film, comprising the steps of:
- providing a semiconductor substrate;
- forming an insulating layer on the surface of the substrate;
- forming a conductive adhesive layer on the insulating layer;
- forming a lower electrode on the adhesive layer;
- forming a first ferroelectric thin film on top of the lower electrode;
- forming islands of a metal insertion substance on the crystal grain boundaries on the surface of the first ferroelectric thin film;
- and
- forming a second ferroelectric thin film on top of the islands of metal insertion substance and the first ferroelectric thin film.
A semiconductor fabrication method, comprising the steps of:
- providing a semiconductor substrate;
- forming an adhesive layer on the substrate;
- forming a lower electrode on the adhesive layer;
- forming a first ferroelectric thin film on top of the lower electrode;
- forming a metal insertion substance layer on the first ferroelectric thin film;
- forming a second ferroelectric thin film on the metal insertion substance layer;
- and
- causing the first and second ferroelectric thin films to absorb the metal insertion substance layer.
Dependencies are inferred from the claim text.