Method for fabricating semiconductor device utilizing dual photoresist films imaged with same exposure mask

A method for fabricating a semiconductor device, comprising the steps of:

• coating an anti-reflective film over a lower layer to be patterned;
• coating a first photoresist film over said anti-reflective film and subjecting said first photoresist film to a light exposure process using a mask and a development process, thereby forming a first photoresist film pattern;
• etching an exposed portion of said anti-reflective film using said first photoresist film pattern as a mask, thereby forming an anti-reflective film pattern;
• removing said first photoresist film pattern and coating a second photoresist film over the entire exposed surface of said resulting structure obtained after the removal of said first photoresist film pattern;
• subjecting said second photoresist film to a light exposure process using said mask utilized in the forming of said first photoresist film pattern and a development, thereby forming a second photoresist film pattern;
• and
• etching an exposed portion of said anti-reflective film pattern and then etching an exposed portion of said lower layer using said second photoresist film pattern as a mask, thereby forming a lower layer pattern.