Photosensitive resin composition and method for forming a pattern using the composition
AssigneeMitsubishi Chemical Corporation
InventorsMineo Nishi, Koji Nakano, Makoto Ikemoto
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AssigneeMitsubishi Chemical Corporation
InventorsMineo Nishi, Koji Nakano, Makoto Ikemoto
Estimating the term…
A photosensitive resin composition comprising an alkali-soluble resin, a quinonediazide-type photosensitive compound and a solvent, wherein the alkali-soluble resin is a polycondensation product of 1 at least one phenolic compound (A) of the following formula (A) with 2 formaldehyde (a) and at least one carbonyl compound (b) of the following formula (B), in which the mixing ratio of the formaldehyde (a) to the carbonyl compound (b) is within a range of from 1/99 to 99/1 in terms of the molar ratio of (a)/(b), and the alkaline soluble resin has partial structures of the following formula (C), in which the weight ratio of repeating units (.beta.) wherein m is from 1 to 5, to repeating units (.alpha.) wherein m is 0, i.e. the weight ratio of (.beta.)/(.alpha.), is at most 0.25: ##STR1## wherein R.sup.1 is a group of the formula R.sup.2, OR.sup.3, COOR.sup.4 or CH.sub.2 COOR.sup.5, wherein R.sup.2 is a C.sub.1-4 alkyl group, each of R.sup.3, R.sup.4 and R.sup.5 which are independent of one another, is a hydrogen atom or a C.sub.1-4 alkyl group, n is an integer of from 0 to 3, provided that when n is 2 or 3, a plurality of R.sup.1 may be the same or different, each of R.sup.6 and R.sup.7 which are independent of each other, is a hydrogen atom, a C.sub.1-4 lower alkyl group, an aryl group or an aralkyl group, R.sup.8 is the same group as R.sup.1, R.sup.9 is the same group as R.sup.6, R.sup.10 is the same group as R.sup.7, p is the same integer as n, provided that R.sup.6 and R.sup.7, and R.sup.9 and R.sup.10, are not simultaneously hydrogen atoms, and m is an integer of from 0 to 5.
A photosensitive resin composition comprising an alkali-soluble resin, a quinonediazide photosensitive compound and a solvent, wherein the alkali-soluble resin is a polycondensation product of 1 at least one phenolic compound (A) of the following formula (A) with 2 formaldehyde (a) and at least one carbonyl compound (b) of the following formula (B), in which the mixing ratio of the formaldehyde (a) to the carbonyl compound (b) is within a range of from 1/99 to 99/1 in terms of the molar ratio of (a)/(b), and the alkaline soluble resin has partial structures of the following formula (C), in which the weight ratio of repeating units (.beta.) wherein m is from 1 to 5, to repeating units (.alpha.) wherein m is 0, i.e. the weight ratio of (.beta.)/(.alpha.), is 0.01 to 0.25:
A method for forming a resist pattern on a substrate for a semiconductor, which comprises coating on the substrate a photosensitive resin composition, subjecting it to exposure to copy a pattern and developing it to form the resist pattern, wherein the photosensitive resin composition comprises an alkali-soluble resin, a quinonediazide photosensitive compound and a solvent, wherein the alkali-soluble resin is a polycondensation product of 1 at least one phenolic compound (A) of the following formula (A) with 2 formaldehyde (a) and at least one carbonyl compound (b) of the following formula (B), in which the mixing ratio of the formaldehyde (a) to the carbonyl compound (b) is within a range of from 1/99 to 99/1 in terms of the molar ratio of (a)/(b), and the alkaline soluble resin has partial structures of the following formula (C), in which the weight ratio of repeating units (.beta.) wherein m is from 1 to 5, to repeating units (.alpha.) wherein m is 0, i.e. the weight ratio of (.beta.)/(.alpha.), is 0.01 to 0.25:
A photosensitive resin composition comprising an alkali-soluble resin, a quinonediazide photosensitive compound and a solvent, wherein the alkali-soluble resin is a polycondensation product of 1 at least one phenolic compound (A) of the following formula (A) and 2 a mixture (D) of phenolic compounds of the following formula (D), in which the weight ratio of compounds (D-2) wherein r is from 1 to 5, to compounds (D-1) wherein r is 0, i.e. the weight ratio of (D-2)/(D-1), is 0.01 to 0.25, with formaldehyde (a):
A method for forming a resist pattern on a substrate for a semiconductor, which comprises coating on the substrate a photosensitive resin composition, subjecting it to exposure to copy a pattern and developing it to form the resist pattern, wherein the photosensitive resin composition comprises an alkali-soluble resin, a quinonediazide photosensitive compound and a solvent, wherein the alkali-soluble resin is a polycondensation product of 1 at least one phenolic compound (A) of the following formula (A) and 2 a mixture (D) of phenolic compounds of the following formula (D), in which the weight ratio of compounds (D-2) wherein r is from 1 to 5, to compounds (D-1) wherein r is 0, i.e. the weight ratio of (D-2)/(D-1), is 0.01 to 0.25, with formaldehyde (a):
Dependencies are inferred from the claim text.