Phase shift mask comprising micro spaces in peripheral opaque regions
AssigneeHyundai Electronics Industries Co., Ltd.
InventorYoung M. Ham
Life of this patent
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Abstract
The present invention relates to a phase shift mask for modifying blackout patterns at the peripheral sites of the mask, thereby capable of compensating the differences in the light intensity at the peripheral sites of the mask where the light intensity is relatively reduced after light has passed through the mask. The present invention enables the uniformity of critical dimension of the patterns in photoresist film, thus enhances the reliability and the yield of devices.
Claims3
A phase shift mask having multiple blackout patterns at regular intervals on a mask substrate, said phase shift mask further including a phase shift material pattern covering space between one blackout pattern and an adjacent blackout pattern and also a designated part of said one and said adjacent blackout patterns said phase shift mask comprising:
- micro spaces in peripheral site blackout patterns, said micro spaces having a size for allowing light interference without defining patterns at a designated site of a photoresist pattern, said peripheral site blackout patterns being positioned at peripheral sites of the mask where light intensity is otherwise reduced after light has passed through the mask relative to light intensity interior to the peripheral sites.
A phase shift mask having multiple blackout patterns at regular intervals on a substrate, said phase shift mask further including phase shift material pattern covering space between one blackout pattern and an adjacent blackout pattern and also a designated part of said one and said adjacent blackout patterns, said phase shift mask comprising:
- one of inner and outer blackout patterns being thicker than other blackout patterns, said inner blackout patterns being interior relative to said outer blackout patterns, said inner and outer blackout patterns being positioned at peripheral sites of the mask where light intensity is otherwise reduced after light has passed through the mask relative to light intensity interior to the peripheral sites.
A phase shift mask having multiple blackout patterns at regular intervals on a substrate, said phase shift mask further including a phase shift material pattern covering space between one blackout pattern and an adjacent blackout pattern and also a designated part of said one and said adjacent blackout patterns, said phase shift mask comprising:
- peripheral site blackout patterns positioned at the peripheral sites of the mask where light intensity is otherwise reduced after light has passed through the mask, said peripheral site blackout patterns being smaller in width by a designated size than blackout patterns at other sites.
Dependencies are inferred from the claim text.