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US 5,635,258 AGranted
Method of forming a boron-doped diamond film by chemical vapor deposition
AssigneeNational Science Council
InventorsChia-Fu Chen, Sheng-Hsiung Chen, Tsao-Ming Hong
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Abstract
A method of forming boron-doped diamond film by, chemical vapor deposition (CVD) utilizing two-component system reactant gas doped with trimethyl borate.
Claims7
A method of fabricating boron doped diamond film on a substrate, comprising the following steps:
- (a) providing a two-component system reactant gas, wherein the two-component system reactant gas is a gas selected from the group consisting of C.sub.x H.sub.y --CO.sub.2,and C.sub.x H.sub.y O.sub.z --CO.sub.2, and said gas is doped with trimethyl borate, wherein x, y, and z represent integers;
- (b) activating said trimethyl borate doped reactant gas by chemical vapor deposition process;
- and
- (c) exposing said substrate to said activated reactant gas, thus causing the growth of the boron doped diamond film on said substrate.
1 more element
Dependencies are inferred from the claim text.