Silicon oxide removal in semiconductor processing
AssigneeMicron Technology, Inc.
InventorBrian A. Vaartstra
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Abstract
The present invention provides methods of removing or etching silicon oxide from a semiconductor wafer by contacting the silicon oxide with diorganocarbonates, including comprising hydrocarbyl groups that are either aliphatic, aromatic, or a combination thereof. The diorganocarbonate can include (C.sub.1 -C.sub.10)hydrocarbyl groups. Specific examples of useful diorganocarbonates include dimethylcarbonate, diethylcarbonate, dipropylcarbonate, diisopropylcarbonate, and dibutylcarbonate.
Claims30
A method of removing silicon oxide from the surface of a semiconductor wafer comprising the steps of:
- a) providing a semiconductor wafer having silicon oxide located on a surface thereof;
- and
- b) planarizing at least a portion of the silicon oxide on the semiconductor wafer by contacting the silicon oxide with diorganocarbonate.
A method of removing silicon oxide from the surface of a semiconductor wafer comprising the steps of:
- providing a semiconductor wafer having silicon oxide located on a surface thereof;
- b) providing a catalyst;
- and
- c) planarizing the semiconductor wafer by contacting the silicon oxide with diorganocarbonate and the catalyst, wherein the diorganocarbonate can be represented as (R)OC(O)O(R), wherein the R groups are hydrocarbyl groups selected from the group consisting of an aliphatic group, an aromatic group, and a combination thereof.
A method of removing silicon oxide from the surface of a semiconductor wafer comprising the steps of:
- a) providing a semiconductor wafer having silicon oxide located on a surface thereof;
- and
- b) planarizing the semiconductor wafer by contacting the silicon oxide with diorganocarbonate and a catalyst.
A method of removing silicon oxide from the surface of a semiconductor wafer comprising the steps of:
- a) providing a semiconductor wafer having silicon oxide located on a surface thereof;
- b) providing a plasma catalyst;
- and
- c) removing at least a portion of the silicon oxide by contacting the silicon oxide with diorganocarbonate and the plasma catalyst.
A method of removing silicon oxide from the surface of a semiconductor wafer comprising the steps of:
- a) providing a semiconductor wafer having silicon oxide located on a surface thereof;
- and
- b) removing at least a portion of the silicon oxide by contacting the silicon oxide with a liquid diorganocarbonate.
Dependencies are inferred from the claim text.