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US 5,633,781 AGranted
Isolated sidewall capacitor having a compound plate electrode
AssigneeInternational Business Machines Corporation
InventorsKatherine L. Saenger, David E. Kotecki
Life of this patent
Estimating the term…
Abstract
A capacitor structure is provided, with a first conductor on top of a substrate having at least one layer of dielectric material thereon; a first non-conductor on top of and substantially in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein; a second conductor, in electrical contact with the first conductor, formed on the sidewalls of the first opening; a non-conductive sidewall spacer formed in the first opening and contacting the second conductor, the non-conductive sidewall spacer having a second opening formed therein; and a third conductor formed in the second opening.
Claims49
A capacitor structure, comprising:
- a substrate having at least one layer of dielectric material thereon;
- a first conductor on top of the substrate;
- a first non-conductor on top of and in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein;
- a second conductor, in electrical contact with the first conductor, formed on the sidewalls of the first opening;
- a non-conductive sidewall spacer formed in the first opening and contacting the second conductor, the non-conductive sidewall spacer having a second opening formed therein;
- and
- a third conductor formed in the second opening, wherein the third conductor does not fill the second opening so that a third opening is formed therein.
4 more elements
A capacitor structure, comprising:
- a substrate having at least one layer of dielectric material thereon;
- a first conductor on top of the substrate;
- a first non-conductor on top of and in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein;
- a second conductor, in electrical contact with the first conductor, formed on the sidewalls of the first opening;
- a non-conductive sidewall spacer formed in the first opening and contacting the second conductor, the non-conductive sidewall spacer having a second opening formed therein;
- a third conductor formed in the second opening;
- and
- a second non-conductor disposed between the first conductor and the substrate dielectric layer.
5 more elements
A capacitor structure, comprising:
- a substrate having at least one layer of dielectric material thereon;
- a first conductor on top of the substrate;
- a first non-conductor on top of and in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein;
- a second non-conductor on top of and in register with the first non-conductor
- a second conductor, in electrical contact with the first conductor, formed on the sidewalls of the first opening;
- a non-conductive sidewall spacer formed in the first opening and contacting the second conductor, the non-conductive sidewall spacer having a second opening formed therein;
- and
- a third conductor formed in the second opening.
5 more elements
A capacitor structure, comprising:
- a substrate having at least one layer of dielectric material thereon;
- a first conductor on top of the substrate;
- a first non-conductor on top of and in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein;
- a second conductor, in electrical contact with the first conductor, formed on the sidewalls of the first opening;
- a non-conductive sidewall spacer formed in the first opening and contacting the second conductor, the non-conductive sidewall spacer having a second opening formed therein;
- a third conductor formed in the second opening;
- and
- a conductive plug formed in the substrate dielectric layer, the conductive plug providing electrical contact between the third conductor and circuit elements in the substrate.
5 more elements
A capacitor structure, comprising:
- a substrate having at least one layer of dielectric material thereon;
- a first conductor on top of the substrate;
- a first non-conductor on top of and in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein;
- a second conductor, in electrical contact with the first conductor, formed on the sidewalls of the first opening;
- a non-conductive sidewall spacer formed in the first opening and contacting the second conductor, the non-conductive sidewall spacer having a second opening formed therein;
- a third conductor formed in the second opening;
- and
- a conductive sidewall spacer in between the non-conductive sidewall spacer and the third conductor.
5 more elements
A capacitor structure, comprising:
- a substrate having at least one layer of dielectric material thereon;
- a first conductor on top of the substrate;
- a first non-conductor on top of and in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein;
- a second conductor, in electrical contact with the first conductor, formed on the sidewalls of the first opening;
- a non-conductive sidewall spacer formed in the first opening and contacting the second conductor, the non-conductive sidewall spacer having a second opening formed therein;
- and
- a third conductor formed in the second opening;
- wherein the substrate dielectric layer has a third opening in register with the second opening, the second and third openings being contiguously filled with the third conductor.
5 more elements
Dependencies are inferred from the claim text.