Press contact type semiconductor device

A press contact type semiconductor device, comprising:

• a semiconductor substrate, being provided with a P-N junction in its interior, having first and second major surfaces;
• a ring-shaped insulator being formed along an edge of the overall periphery and said first and second major surfaces of said semiconductor substrate;
• a first heat compensator being in contact with said first major surface;
• and
• a second heat compensator being in contact with said second major surface,
• the inner peripheral diameter of a portion of said insulator along said first major surface being larger than that of a portion along said second major surface.

A press contact type semiconductor device, comprising:

• a semiconductor substrate, being provided with a P-N junction in its interior, having first and second major surfaces;
• a ring-shaped insulator being formed along an edge of the overall periphery and said first and second major surfaces of said semiconductor substrate;
• a first heat compensator being in contact with said first major surface;
• and
• a second heat compensator being in contact with said second major surface, a ring-shaped groove being formed coaxially with said semiconductor substrate in portions of said first and second major surfaces contacting said insulator.

A press contact type semiconductor device, comprising:

• a semiconductor substrate, being provided with a P-N junction in its interior, having first and second major surfaces;
• a ring-shaped insulator being formed along an edge of the overall periphery and said first and second major surfaces of said semiconductor substrate;
• a first heat compensator being in contact with said first major surface;
• and
• a second heat compensator being in contact with said second major surface,
• at least one concave portion being formed on the surface of a portion of said insulator being formed along said first major surface and/or said second major surface.

A press contact type semiconductor device, comprising:

• a semiconductor substrate, being provided with a P-N junction in its interior, having first and second major surfaces;
• a ring-shaped insulator being formed along an edge of the overall periphery and said first and second major surfaces of said semiconductor substrate;
• a first heat compensator being in contact with said first major surface;
• and
• a second heat compensator being in contact with said second major surface,
• a ring-shaped concave portion being formed on the overall periphery of the surface of a portion of said insulator being formed along said edge.