Nonvolatile reprogrammable interconnect cell with FN tunneling and programming method thereof

An array of programmable interconnect cells in an integrated circuit substrate, said array comprising

• each programmable interconnect cell having an MOS switch transistor having a pair of source/drain regions in said substrate separated by a floating gate electrode, said floating gate electrode extending over a tunneling oxide on said substrate spaced from and adjacent to the switch transistor and extending under a control gate electrode, said substrate having a first conducting region under said tunneling oxide adjacent to the switch transistor and a second conducting region contiguous to said first conducting region, said first and second conducting regions forming a PN junction in said substrate;
• said programmable interconnect cells forming an array in rows and columns, programmable interconnect cells in a row having said control gate electrodes connected in common to a first line, programmable interconnect cells in a column having said first conducting regions connected in common to a second line and said second conducting regions connected in common to a third line;
• whereby each programmable interconnect cell can be selectively programmed.