Semiconductor component arrangement for overvoltage protection of MOSFETs and IGBTS
AssigneeSiemens Aktiengesellschaft
InventorsJosef-Matthias Gantioler, Alfred Porst, Jenoe Tihanyi, Hans Stut, deceased
Life of this patent
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Abstract
MOSFET and IGBT components protected against overvoltage by a limiting diode inserted between drain or, respectively, collector terminal and gate terminal are provided. A freewheeling diode connected to the component having a limiting diode with a breakdown voltage that is lower than the breakdown voltage of the freewheeling diode by a defined amount is provided. This over-voltage protection can be achieved in a simple way by integrating the limiting diode into the semiconductor body of the freewheeling diode and by a corresponding arrangement of the anode zone of the limiting diode.
Claims5
Semiconductor component arrangement including a semiconductor body for overvoltage protection of semiconductor components controllable by field effect having a freewheeling diode connected thereto, comprising:
- said freewheeling diode being integrated into said semiconductor body;
- and a voltage limiting diode integrated into said semiconductor body, said voltage limiting diode having a breakdown voltage that is lower than a breakdown voltage of said freewheeling diode, said diodes having separate anode terminals.
Dependencies are inferred from the claim text.