Method for forming damage free patterned layers adjoining the edges of high step height apertures

A method for forming a patterned final conductor layer comprising:

• providing a semiconductor substrate, the semiconductor substrate having a kerf formed therein;
• forming upon the semiconductor substrate and into the kerf a blanket final conductor layer, the blanket final conductor layer having a blanket conformal Anti-Reflective Coating (ARC) layer formed thereon, the blanket conformal Anti-Reflective Coating (ARC) layer having an aperture formed therein where the blanket final conductor layer is formed into the kerf;
• forming a buffer layer into the aperture, the buffer layer substantially planarizing the blanket conformal Anti-Reflective Coating (ARC) layer;
• forming then a blanket photoresist layer upon the semiconductor substrate;
• and,
• patterning sequentially the blanket photoresist layer, the blanket Anti-Reflective Coating (ARC) layer and the blanket final conductor layer to form a patterned photoresist layer, a patterned Anti-Reflective Coating (ARC) layer and a patterned final conductor layer.