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US 5,633,207 AGranted
Method of forming a wiring layer for a semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsHiroyuki Yano, Katsuya Okumura
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Abstract
A method of forming a wiring layer for a semiconductor device forms a first layer on a dielectric film on a substrate to protect integrated circuit devices from overpolishing when a wiring layer is formed on a second layer above the polish stop layer. The wiring layer is deposited using selective chemical vapor deposition to prevent contamination of the wafer.
Claims10
A method of forming a wiring layer on a substrate for a semiconductor device, said method comprising the steps of:
- forming a dielectric film on said substrate;
- forming a first layer on said dielectric film;
- selectively etching said first layer and said dielectric film to form a trench ending in said dielectric film;
- forming a second layer on said dielectric film and said first layer wherein the hardness of said second layer is less than the hardness of said first layer;
- polishing said second layer using said first layer as a polish stop;
- selectively depositing a conductive layer on said second layer, but not on said first layer;
- polishing said conductive layer using said first layer as a polish stop;
- and
- removing said first layer.
6 more elements
Dependencies are inferred from the claim text.