Method for forming tungsten plugs in contact holes of a semiconductor device

Abstract

A method for forming tungsten (or aluminum) plugs in contact holes of an ultra highly integrated semiconductor device is disclosed. The method comprises the steps of: applying an etch process to a first insulating layer covering an active region and a field oxide film of a substrate and to a second insulating layer to form a first deep contact hole on the active region by use of a first photosensitive pattern, said first photosensitive pattern being formed on said second insulating film atop said first insulating film; depositing tungsten (or aluminum) on said active region of said first contact hole by use of a selective metal deposition reactor to form a first tungsten (or aluminum) plug filling said first contact hole completely; treating the upper surface of said first tungsten (or aluminum) plug chemically with a mixture of BCl.sub.3, Cl.sub.2, and HF in an argon carrier, in a plasma reactor so as not to grow the first tungsten (or aluminum) plug any more; applying another etch process to a second insulating layer to form a second shallow contact hole on a conductive wire by use of a second photosensitive pattern formed on said second insulating film, said conductive wire being formed on said first insulating film atop said oxide film; depositing tungsten (or aluminum) on said active region of said second contact hole by use of said selective metal deposition reactor under the condition stopping the growth of said first tungsten (or aluminum) plug so as to form a second tungsten (or aluminum) plug filling said second contact hole completely.

Dependencies are inferred from the claim text.