Semiconductor device and method for making the same
AssigneeNEC Corporation
InventorMitsuhiro Sugiyama
Life of this patent
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Abstract
Disclosed is a semiconductor device in which dummy regions which are lower than an isolated element region are formed around the isolated element region. Another dummy region which has a height nearly equal to those of element regions may be formed at a non-element-region-existing region, accompanying with lower dummy regions. The method for making the semiconductor device has the steps of suitably forming the element regions and dummy regions on a insulating layer on a substrate, depositing a insulator on the entire surface of the insulating layer and polishing the insulator to obtain a plane surface.
Claims3
A method for making a semiconductor device, comprising the steps of:
- forming a plurality of island semiconductor regions and a dummy semiconductor region which is lower than said island semiconductor regions by partially removing a semiconductor layer on a insulating layer;
- depositing an insulator on the entire surface of said insulator layer to cover said island semiconductor region and said dummy semiconductor region;
- and
- polishing said insulator near to the top surfaces of said island semiconductor regions.
A method for making a semiconductor device, comprising the steps of:
- forming a plurality of island semiconductor regions, a first dummy semiconductor region which has a height nearly equal to said island semiconductor regions and a second dummy semiconductor region which is lower than said first dummy semiconductor region by partially removing a semiconductor layer on a insulating layer;
- depositing an insulator on the entire surface of said insulator layer including said island semiconductor regions, said first and second dummy semiconductor regions to a height higher than said island semiconductor regions;
- and
- polishing said insulator near to the top surfaces of said island semiconductor regions.
A method for making a semiconductor device, comprising the steps of:
- forming a plurality of island semiconductor regions by partially removing a semiconductor layer on a insulating layer, wherein at least one of said island semiconductor regions is provided with a trench;
- depositing an insulator on the entire surface of said insulating layer including said island semiconductor regions to a height higher than said island semiconductor regions;
- and
- polishing said insulator near to the top surfaces of said island semiconductor regions;
- wherein said insulator is filled between island semiconductor regions and into said trench.
Dependencies are inferred from the claim text.