US 5,633,189 AGranted

Method of making metal to metal antifuse

AssigneeActel Corporation

InventorsYeouchung Yen, Shih-Oh Chen

Life of this patent

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Abstract

The antifuse structure of the present invention includes a bottom planarized electrode, an ILD disposed over the bottom electrode, an antifuse cell opening in and through the ILD exposing the bottom electrode, a first barrier metal layer disposed by means of collimated sputter deposition in the antifuse cell opening to form a layer of uniform thickness existing only within the antifuse cell opening in order to protect the antifuse material layer from diffusion from the bottom electrode and to form an effective bottom electrode of reduced area, hence reducing the capacitance of the device, an antifuse material layer disposed in the antifuse cell opening and over the first barrier metal layer, a second barrier metal layer disposed over the antifuse material layer and optionally formed by collimated sputter deposition, and a top electrode disposed over the second barrier metal layer.

Claims4

Dependent claims

A process for fabricating a metal-to-metal antifuse comprising the following steps:

a) forming a bottom electrode having an upper surface over an insulating portion of a microcircuit structure;
(b) forming an interlayer dielectric layer over said bottom electrode;
(c) etching an antifuse cell opening in and through said interlayer dielectric layer so as to expose a portion of said upper surface of said bottom electrode;
(d) depositing a first barrier metal layer having a first portion over said interlayer dielectric layer and a second flat portion separated from said first portion and in said antifuse cell opening and over and in physical and electrical contact with said bottom electrode using the technique of collimated sputter deposition;
(e) spin coating a layer of photoresist over said first barrier metal layer;
(f) etching back said layer of photoresist and said first barrier metal layer so as to leave only a portion of said layer of photoresist in said antifuse cell opening over said second flat portion of said first barrier metal layer
(g) stripping said portion of said layer of photoresist from within said antifuse cell opening;
(h) depositing an antifuse material layer over said flat portion of said first barrier metal layer and over said interlayer dielectric layer;
(i) depositing a second barrier metal layer over said antifuse material layer;
(j) patterning and etching said antifuse material layer and said second barrier metal layer;
and
(k) forming a top electrode over said second barrier metal layer.

9 more elements

Dependencies are inferred from the claim text.

Facts

Application: 08/425,122Filed 18 Apr 1995 · division
Priority: 1 Aug 1994
Granted: 27 May 1997
Term ends: Not estimatedThe source records don’t support an estimate.

Classification2 codes

H10W 20/491
Adaptable interconnections, e.g. fuses or antifuses: antifuses, i.e. interconnections changeable from non-conductive to conductive
H10W
Generic packages, interconnections, connectors or other constructional details of devices covered by

Family

Serial284,054Parent of this continuation-in-part · filed 1 Aug 1994
Serial319,170Parent of this continuation-in-part · filed 6 Oct 1994
Serial328,247Parent of this division · filed 24 Oct 1994
US 5,543,656 AParent of this division
US 5,541,441 AParent of this continuation-in-part
US 5,633,189 AThis patent

From the US filing history. Foreign family members aren’t listed.