Post treatment method for in-situ cleaning
AssigneeAnelva Corporation
InventorSatoshi Doi
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AssigneeAnelva Corporation
InventorSatoshi Doi
Estimating the term…
A method for performing a post treatment effectively in a short period of time after in-situ cleaning for removing residual material remaining in a reaction chamber after a chemical vapor deposition process. The method preferably comprises a post treatment gas containing an element in common with a thin film and reactive with a cleaning gas to form a volatile product being introduced into the reaction chamber by a gas introduction system at such a flow rate that the thin film deposition rate is reaction-limited. The method further comprises plasma forming system forming a plasma by applying electric power to the post treatment gas under the condition that the thin film deposition rate is reaction-limited. The residual cleaning gas reacts with the post treatment gas to form a volatile product which is expelled out by an exhaust system. The cleaning gas is thereby removed without being embedded in the thin film.
A method for performing a post treatment comprising the steps of:
A method for performing a post treatment comprising the steps of:
Dependencies are inferred from the claim text.