Microelectronic integrated circuit including triangular semiconductor "and" gate device

A microelectronic device formed on a semiconductor substrate, the device having a periphery defined by a triangle and comprising:

• an active area formed within said periphery;
• a first terminal formed in said active area;
• a second terminal which is formed in said active area and spaced from the first terminal;
• and
• an inactive area disposed between said active area and said periphery.

A microelectronic device formed on a semiconductor substrate, the device having a periphery defined by a triangle and comprising:

• an active area formed within said periphery;
• a first terminal formed in said active area;
• a second terminal which is formed in said active area and spaced from the first terminal;
• in which:
• said triangle has first, second and third vertices;
• and
• the first and second terminals are formed adjacent to said first and second vertices, respectively.

A microelectronic device formed on a semiconductor substrate, the device having a periphery defined by a triangle and comprising:

• an active area formed within said periphery;
• a first terminal formed in said active area;
• a second terminal which is formed in said active area and spaced from the first terminal;
• and
• a second gate formed between said first gate and the second terminal.

A microelectronic device formed on a semiconductor substrate, the device having a periphery defined by a triangle and comprising:

• an active area formed within said periphery;
• a first terminal formed in said active area;
• a second terminal which is formed in said active area and spaced from the first terminal;
• a first gate formed between the first terminal and the second terminal;
• a second gate formed between the first gate and the second terminal;
• a third gate formed between the second gate and the second terminal;
• and
• a third terminal formed between the second and third gates.

A microelectronic integrated circuit, comprising:

• a semiconductor substrate;
• and
• a plurality of microelectronic devices formed on the substrate, each device having a periphery defined by a triangle and comprising:
• an active area formed within said periphery;
• a first terminal formed in said active area;
• a second terminal which is formed in said active area and spaced from the first terminal;
• a first gate formed between the first terminal and the second terminal;
• and
• a channel connecting said first and second terminals, the channel being controlled by a voltage applied to said first gate.

A microelectronic integrated circuit, comprising:

• a semiconductor substrate;
• and
• a plurality of microelectronic devices formed on the substrate, each device having a periphery defined by a triangle and comprising:
• an active area formed within said periphery;
• a first terminal formed in said active area;
• a second terminal which is formed in said active area and spaced from the first terminal;
• and
• a first gate formed between the first terminal and the second terminal;
• in which at least one of said devices further comprises an inactive area disposed between said active area and said periphery.

A microelectronic integrated circuit, comprising:

• a semiconductor substrate;
• and
• a plurality of microelectronic devices formed on the substrate, each device having a periphery defined by a triangle and comprising:
• an active area formed within said periphery;
• a first terminal formed in said active area;
• a second terminal which is formed in said active area and spaced from the first terminal;
• and
• a first gate formed between the first terminal and the second terminal;
• in which said at least one of said devices further comprises a first gate terminal which is formed in said inactive area and connected to the first gate.

A microelectronic integrated circuit, comprising:

• a semiconductor substrate;
• and
• a plurality of microelectronic devices formed on the substrate, each device having a periphery defined by a triangle and comprising:
• an active area formed within said periphery;
• a first terminal formed in said active area;
• a second terminal which is formed in said active area and spaced from the first terminal;
• and
• a first gate formed between the first terminal and the second terminal;
• in which:
• said triangle has first, second and third vertices;
• and
• the first and second terminals are formed adjacent to said first and second vertices respectively.

A microelectronic integrated circuit, comprising:

• a semiconductor substrate;
• and
• a plurality of microelectronic devices formed on the substrate, each device having a periphery defined by a triangle and comprising:
• an active area formed within said periphery;
• a first terminal formed in said active area;
• a second terminal which is formed in said active area and spaced from the first terminal;
• and
• a first gate formed between the first terminal and the second terminal;
• in which at least one of said devices further comprises a second gate formed between the first gate and the second terminal.

A microelectronic integrated circuit, comprising:

• a semiconductor substrate;
• and
• a plurality of microelectronic devices formed on the substrate, each device having a periphery_ defined by a triangle and comprising:
• an active area formed within said periphery;
• a first terminal formed in said active area;
• a second terminal which is formed in said active area and spaced from the first terminal;
• and
• a first gate formed between the first terminal and the second terminal;
• in which:
• at least one of said devices further comprises an inactive area disposed between said active area and said periphery;
• and
• the first gate has opposite end portions that extend into said inactive area.

A microelectronic integrated circuit, comprising:

• a semiconductor substrate;
• and
• a plurality of microelectronic devices formed on the substrate, each device having a periphery_ defined by a triangle and comprising:
• an active area formed within said periphery;
• a first terminal formed in said active area;
• a second terminal which is formed in said active area and spaced from the first terminal;
• and
• a first gate formed between the first terminal and the second terminal;
• in which:
• said devices are closely packed on the substrate;
• and
• the circuit further comprises interconnect wiring for electrically interconnecting the first terminals, second terminals and first gates of said devices in a predetermined manner, the wiring comprising electrical conductors that extend in three directions that are angularly displaced from each other by 60.degree..